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Our range of products include rgc80tsx8r rohm igbt - 1800v 80a high speed power transistor, g40h120df2 1200v 40a igbt - stmicroelectronics to-247 package, bipolar transistors bjt(mmbt8099lt1g), bc807-25 bipolar (bjt) single transistor, pnp, -45 v, 200 mhz, 300 mw, -500 ma, 160 hfe, original apt12031jfll power mosfet module - high voltage sot-227 and ixys ixfk140n30p power mosfet - high current n-channel transistor (to-264 package).

RGC80TSX8R ROHM IGBT - 1800V 80A High Speed Power Transistor

RGC80TSX8R ROHM IGBT - 1800V 80A High Speed Power Transistor
  • RGC80TSX8R ROHM IGBT - 1800V 80A High Speed Power Transistor
  • RGC80TSX8R ROHM IGBT - 1800V 80A High Speed Power Transistor
  • RGC80TSX8R ROHM IGBT - 1800V 80A High Speed Power Transistor
  • RGC80TSX8R ROHM IGBT - 1800V 80A High Speed Power Transistor
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Product Price: Rs 250 / PieceGet Best Price

Minimum Order Quantity: 10 Piece

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Product Details:
Part NumberRGC80TSX8R
Collector Emitter Voltage1800
Collector Current80 A
IGBT TypeTrench
Mounting TypeThrough Hole
Package/CaseTO-247-3
Operating Temperature-55°C to 175°C

RGC80TSX8R ROHM IGBT, a premium-grade power semiconductor engineered for extreme high-voltage environments. This 1800V 80A Field Stop Trench IGBT is the industry standard for efficiency and durability in power electronics.

Why Choose Our RGC80TSX8R

  • High Voltage Rating: Operates safely up to 1800V, ideal for heavy industrial use.

  • Superior Current Handling: Supports 80A peak current, ensuring stability under heavy loads.

  • Integrated Fast Recovery Diode: Built-in monolithic diode simplifies circuit design and reduces component count.

  • Optimized Switching: Features low V to minimize heat dissipation and maximize energy efficiency.

Common Industry Applications:

  • Induction Heating (IH): Perfect for high-power induction cooktops and industrial furnaces.

  • Inverters: Ideal for voltage-resonance inverters and solar power systems.

  • Power Supplies: Used in high-speed UPS and industrial SMPS.

  • Motor Control: Precision performance for variable speed drives.



Additional Information:

  • Production Capacity: -
  • Delivery Time: immediate ready to dispatch
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G40H120DF2 1200V 40A IGBT - STMicroelectronics TO-247 Package

G40H120DF2 1200V 40A IGBT - STMicroelectronics TO-247 Package
  • G40H120DF2 1200V 40A IGBT - STMicroelectronics TO-247 Package
  • G40H120DF2 1200V 40A IGBT - STMicroelectronics TO-247 Package
  • G40H120DF2 1200V 40A IGBT - STMicroelectronics TO-247 Package
  • G40H120DF2 1200V 40A IGBT - STMicroelectronics TO-247 Package
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Product Price: Rs 225 / PieceGet Best Price

Minimum Order Quantity: 5 Piece

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Product Details:
Part NumberG40H120DF2
Collector Emitter Voltage1200 V
Collector Current40 A
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Package/CaseTO-247-3
ManufacturerSTMicroelectronics

The STMicroelectronics G40H120DF2 is a high-performance 1200V 40A IGBT designed for demanding high-voltage switching applications. Featuring advanced field-stop trench gate technology, this TO-247 module offers low conduction and switching losses. Ideal for inverters, motor drives, and industrial power supplies.

Product Specifications:

  • Model: G40H120DF2

  • Manufacturer: STMicroelectronics

  • Technology: Field-Stop Trench IGBT

  • Package/Case: TO-247

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Current - Collector (Ic) (Max) @ 25C: 80A

  • Current - Collector (Ic) (Max) @ 100C: 40A

  • Vce(on) (Max) @ 40A, 15V: 2.2V

  • Input Capacitance (Cies) @ 25V: 3680 pF

  • Operating Temperature: -55C to 175C

  • Configuration: Single IGBT

  • Lead Plating: Matte Tin

  • Mounting Type: Through Hole

Key Features and Benefits:

  • 1200V High Voltage Capability: Provides robust operation and an extra safety margin in industrial systems.

  • 40A High Current Performance: Handles high-current loads efficiently, reducing component count and saving space.

  • Field-Stop Trench Technology: Delivers low on-state voltage drop and optimized switching behavior, minimizing energy losses.

  • Standard TO-247 Package: The widely used TO-247 package ensures reliable mounting and compatibility with existing designs.

  • Wide Operating Temperature Range: Operates reliably from -55C to 175C, suitable for harsh environments.

  • Exceptional Short Circuit Ruggedness: Designed to withstand short-circuit events for enhanced system protection.



Additional Information:

  • Delivery Time: immediate ready to dispatch
  • Packaging Details: TO-247
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Bipolar Transistors BJT(MMBT8099LT1G)

Bipolar Transistors   BJT(MMBT8099LT1G)
  • Bipolar Transistors   BJT(MMBT8099LT1G)
  • Bipolar Transistors   BJT(MMBT8099LT1G)
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Product Details:
Packaging TypeSOT 23
No. Of Pins3
Collector Emitter500mA 80V
Part No.MMBT8099LT1G
Temperature150 DEGREE
Bipolar (BJT) Transistor NPN 80V 500mA 150MHz 225mW Surface Mount SOT-23-3 (TO-236)

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  • Delivery Time: READY STOCK
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BC807-25 Bipolar (BJT) Single Transistor, PNP, -45 V, 200 MHz, 300 mW, -500 mA, 160 hFE

BC807-25 Bipolar (BJT) Single Transistor, PNP, -45 V, 200 MHz, 300 mW, -500 mA, 160 hFE
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Product Details:
No. Of Pins3
BrandON
Model No.BC807-25
Part No.BC807-25
Temperature150
ConditionNew
Fixed ResistorsYes
Bipolar (BJT) Single Transistor, PNP, 45 V, 100 MHz, 250 mW, -500 mA, 160 hFE.
The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications.

Additional Information:

  • Item Code: BC807-25
  • Delivery Time: READY STOCK
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Original APT12031JFLL Power MOSFET Module - High Voltage SOT-227

Original APT12031JFLL Power MOSFET Module - High Voltage SOT-227
  • Original APT12031JFLL Power MOSFET Module - High Voltage SOT-227
  • Original APT12031JFLL Power MOSFET Module - High Voltage SOT-227
  • Original APT12031JFLL Power MOSFET Module - High Voltage SOT-227
  • Original APT12031JFLL Power MOSFET Module - High Voltage SOT-227
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Product Price: Rs 700 / PieceGet Best Price

Minimum Order Quantity: 2 Piece

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Product Details:
Drain-Source Voltage (VDS)1200V
Continuous Drain Current (ID)30A
PolarityN-Channel
Drain-Source On-Resistance (RDS(on))310mOhm
Package TypeSOT-227
Gate Threshold TypeStandard Level
ConfigurationSingle
Maximum Operating Junction Temperature150 °C
 APT12031JFLL MOSFET. Designed for high-frequency switching and maximum thermal efficiency, this SOT-227 (Isotop) module is the industry standard for reliability in UPS, Solar Inverters, and Welding machines.
Key Features 
  • Ultra-Low On-Resistance: Minimizes power loss and increases system efficiency.

  • High-Speed Switching: Optimized for high-frequency SMPS and induction heating.

  • Excellent Thermal Management: The isolated SOT-227 package allows for direct mounting to heatsinks without extra insulation.

  • Rugged Construction: Built to withstand harsh industrial environments and voltage spikes.



Additional Information:

  • Delivery Time: immediate ready to dispatch
  • Packaging Details: SOT-227
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IXYS IXFK140N30P Power MOSFET - High Current N-Channel Transistor (TO-264 Package)

IXYS IXFK140N30P Power MOSFET - High Current N-Channel Transistor (TO-264 Package)
  • IXYS IXFK140N30P Power MOSFET - High Current N-Channel Transistor (TO-264 Package)
  • IXYS IXFK140N30P Power MOSFET - High Current N-Channel Transistor (TO-264 Package)
  • IXYS IXFK140N30P Power MOSFET - High Current N-Channel Transistor (TO-264 Package)
  • IXYS IXFK140N30P Power MOSFET - High Current N-Channel Transistor (TO-264 Package)
  • IXYS IXFK140N30P Power MOSFET - High Current N-Channel Transistor (TO-264 Package)
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Product Price: Rs 600 / PieceGet Best Price

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Product Details:
PolarityN Channel
Drain Source Voltage300
Drain Current160A
Package TypeTO-264
Gate Charge185nC
RDS On24nOhm
Mounting TypeThrough Hole

IXYS IXFK140N30P N-Channel Power MOSFET, designed for high-power switching, industrial automation, and heavy-duty electronic applications. This component delivers exceptional efficiency, low on-state resistance, and superior thermal performance, making it ideal for demanding high-current environments.

Engineered by IXYS, a trusted global leader in power semiconductors, this MOSFET is housed in a robust TO-264 package featuring an isolated/exposed metal backside for maximum heat dissipation when mounted to a heatsink.

Major Applications

 

  • Power Supplies: Switched-Mode Power Supplies (SMPS) and Uninterruptible Power Supplies (UPS).

  • Motor Control: DC motor drivers, industrial inverters, and servo drives.

  • Renewable Energy: Solar inverters and wind power converters.

  • Industrial Equipment: Welding machines, induction heating, and high-power DC-DC converters.



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  • Delivery Time: immediate ready to dispatch
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STMicroelectronics STD4NK60Z (D4NK60Z) N-Channel 600V 4A

STMicroelectronics STD4NK60Z (D4NK60Z) N-Channel 600V 4A
  • STMicroelectronics STD4NK60Z (D4NK60Z) N-Channel 600V 4A
  • STMicroelectronics STD4NK60Z (D4NK60Z) N-Channel 600V 4A
  • STMicroelectronics STD4NK60Z (D4NK60Z) N-Channel 600V 4A
  • STMicroelectronics STD4NK60Z (D4NK60Z) N-Channel 600V 4A
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Product Price: Rs 10 / PieceGet Best Price

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Product Details:
PolarityN Channel
Drain Source Voltage600 V
Drain Current4A
Package TypeDPAK
Gate Charge20 nC
RDS On2 mΩ
Drive Voltage10 V
Mounting TypeSMD

STMicroelectronics STD4NK60Z (Marked as D4NK60Z) N-Channel Power MOSFET, engineered using advanced proprietary SuperMESH™ technology. This device is specifically optimized for high-voltage, high-speed switching applications that demand extreme ruggedness, minimal on-resistance, and integrated gate protection.

Manufactured by STMicroelectronics, this MOSFET features integrated Zener diodes back-to-back between the gate and source terminals, providing robust electrostatic discharge (ESD) protection and transient voltage immunity without requiring external clamping components. It is housed in an industry-standard DPAK (TO-252) surface-mount package, making it excellent for compact, high-density power supply designs.



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PMBFJ11O JFET Transistor

PMBFJ11O JFET Transistor
  • PMBFJ11O JFET Transistor
  • PMBFJ11O JFET Transistor
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Product Details:
Packaging Typesot23,sot-23
No. Of Pins3
BrandNXP PHILIPS
Number Of Pins3
Usage/ApplicationIndustrial,Audio,Power Management
Current Rating10 MA
Item CodePMBFJ11O
Packing Style3000pcs reel
MaterialSILICON
Part No.PMBFJ110
Temperature150
ConditionNew
Max Ambient Temperature150
Product OverviewThe PMBFJ110,215 is a N-channel JFET offers high-speed switching and Interchangeability of drain and source connections. It is designed for use with analogue switches, choppers and commutators and audio amplifier applications.
Applications

Industrial, Audio, Power Management



Additional Information:

  • Delivery Time: READY STOCK
  • Packaging Details: REEL
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CL100 Medium Power Transistors Suitable For A wide Range Of Medium Voltage And Current

CL100 Medium Power Transistors Suitable For A wide Range Of Medium Voltage And Current
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Product Details:
Packaging TypeTO39
Model No.CL100
No. Of Pins3
Vces1V
Hfe80MHZ
Temperature175
Part No.CL100
CL100 IS Medium Power Transistors Suitable For Awide Range Of Medium Voltage And Current Amplifier Applications.

Additional Information:

  • Item Code: CL100
  • Delivery Time: READY STOCK
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IRGP4063

IRGP4063
  • IRGP4063
  • IRGP4063
  • IRGP4063
  • IRGP4063
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Product Details:
BrandINTERNATIONAL RECTIFIER
Mounting TypeDIP
Deal in IRGP4063
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Ctsa1020x Transistor

Ctsa1020x Transistor
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Product Details:
SizeTo92
ColorBlack
Transistor Case StyleTo92
Product TypeCTSA1020X
Packaging TypeTO-92
Model No.CTSA1020X
No. Of Pins3
ConditionNew
Part No.CTSA1020X
Fixed ResistorsYes
BrandCDIL
Number Of Pins3
Current2A

Manufacturer:CDIL SemiconductorProduct Category:Bipolar Transistors - BJTRoHS:N Mounting Style:Through HolePackage/Case:TO-92-3Transistor Polarity:PNPConfiguration:SingleCollector- Emitter Voltage VCEO Max:50 VCollector- Base Voltage VCBO:50 VEmitter- Base Voltage VEBO:5 VCollector-Emitter Saturation Voltage:0.5 VMaximum DC Collector Current:2 AGain Bandwidth Product fT:100 MHz Minimum Operating Temperature:- 55 CMaximum Operating Temperature:+ 150 CHeight:7.87 mm Length:5.21 mm Packaging:Bulk Width:4.19 mm Brand:ON Semiconductor Continuous Collector Current:2 A DC Collector/Base Gain hFE Min:70 Pd - Power Dissipation:900 mW Product Type:BJTs - Bipolar Transistors



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ABB Thyristor

ABB Thyristor
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Product Details:
Mounting TypeABB Thyristor
Part NumberABB Thyristor
Country of OriginMade in India
Product TypeABB Thyristor
TypeABB Thyristor
ConditionNew
Established in the year 1997Empire Electronics is recognized among the noteworthy Wholesale Trader And Retailer of Wire Wound Resistors, Ultra Fast Diodes, Trim Pots, NPN Transistors, etc
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BCV47 Bipolar Single Transistor

BCV47 Bipolar Single Transistor
  • BCV47 Bipolar Single Transistor
  • BCV47 Bipolar Single Transistor
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Product Details:
BrandNEXPERIA
Packaging TypeBCV47
Voltage60
Frequency220
ConditionNew
Usage/ApplicationAudio
Model NumberBCV47
NPN, 60 V, 220 MHz, 250 mW, 500 mA, 10000 hFE

The BCV47 is a NPN Darlington Transistor with medium current and low voltage, high DC current gain. Used in preamplifier input stages.
  • Complement to BCV46
Applications

Audio



Additional Information:

  • Item Code: BVC47
  • Delivery Time: READY STOCK
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6N136 High Speed Optocouplers HS Phototransistor

6N136 High Speed Optocouplers HS Phototransistor
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Product Details:
Packaging TypeTUBE
No. Of Pins8
Model No.6N136
Ic16MA
Part No.6N136
Temperature70
Vces5V
6N136 High Speed Optocouplers HS Phototransistor, High Speed Optocouplers

Additional Information:

  • Item Code: 6N136
  • Delivery Time: READY STOCK
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2N6027 Power Transistor

2N6027 Power Transistor
  • 2N6027 Power Transistor
  • 2N6027 Power Transistor
  • 2N6027 Power Transistor
  • 2N6027 Power Transistor
  • 2N6027 Power Transistor
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Product Details:
TypeProgrammable Unijunction
Package TypeTO-92
PolarityNPN
Mounting TypeDIP
Part Number2N6027
Operating Voltage- 50 to 100 Deg C
2N6027 is a Programmable Unijunction Transistor (PUT) used mainly for triggering, timing, and oscillator circuits. It allows the firing threshold to be set externally using resistors, giving more flexibility than a standard UJT.
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Product Details:
Voltage10 V
Part Numbera
Mounting TypeSMD
Brandss
Country of OriginMade in India

A Switching Transistor is a semiconductor device designed to control current flow by acting as an electronic switch. It operates between ON (saturation) and OFF (cut-off) states, making it ideal for high-speed switching applications in electronic circuits. Switching transistors are widely used for driving loads, signal processing, and controlling power in digital and analog systems.

Key Features:

  • Function: Acts as an electronic switch (ON/OFF states)

  • Types: Available in NPN, PNP, MOSFET, and IGBT variants

  • Switching Speed: Fast response suitable for high-frequency operations

  • Power Handling: Suitable for both low-power and high-power circuits

  • Efficiency: Low power loss with high reliability

  • Package: Available in various standard electronic packages

Applications:

  • Power supplies and voltage regulators

  • Motor drivers and relay replacements

  • Logic circuits and digital switching

  • Signal amplification and modulation

  • LED drivers and electronic control units

Switching transistors combine efficiency, speed, and durability, making them essential components in modern electronic and power management systems.

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Thyristors SCR CS45-08

Thyristors SCR CS45-08
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Product Details:
Minimum Order Quantity10 Piece
BrandIXYS
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40N120FL2

40N120FL2
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Product Details:
BrandON
Voltage1200v
Igbt 40a 1200v
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T1Q1A-897M Transistors

T1Q1A-897M Transistors
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Product Details:
Usage/ApplicationIndustrial
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D1588-y
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